US Patent Issued to Intel on Dec. 16 for "Memory comprising conductive ferroelectric material in series with dielectric material" (Oregon Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,628, issued on Dec. 16, was assigned to Intel Corp. (Santa Clara, Calif.).

"Memory comprising conductive ferroelectric material in series with dielectric material" was invented by Charles Kuo (Hillsboro, Ore.) and Kaan Oguz (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a three dimensional crosspoint memory array comprising a plurality of memory cells, wherein a memory cell of the plurality of memory cells comprises a conductive ferroelectric material and wherein the conductive ferroelectric material is in series with a dielectric material."

The patent was filed on Nov. 11, 2021, under Application No. 17/52...