US Patent Issued to Intel on Aug. 19 for "Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,217, issued on Aug. 19, was assigned to Intel Corp. (Santa Clara, Calif.).

"Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication" was invented by Chelsey Dorow (Portland, Ore.), Kevin O'Brien (Portland, Ore.), Carl Naylor (Portland, Ore.), Uygar Avci (Portland, Ore.), Sudarat Lee (Hillsboro, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Chia-Ching Lin (Portland, Ore.), Tanay Gosavi (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.) and Kirby Maxey (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a channel layer including a transition metal dichalcogenide (TMD) ...