ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,155, issued on Aug. 19, was assigned to Intel Corp. (Santa Clara, Calif.).
"Backend memory with air gaps in upper metal layers" was invented by Abhishek A. Sharma (Hillsboro, Ore.), Albert B. Chen (Portland, Ore.), Wilfred Gomes (Portland, Ore.), Fatih Hamzaoglu (Portland, Ore.), Travis W. Lajoie (Forest Grove, Ore.), Van H. Le (Beaverton, Ore.), Alekhya Nimmagadda (Hillsboro, Ore.), Miriam R. Reshotko (Portland, Ore.) and Hui Jae Yoo (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An example IC device includes a frontend layer and a backend layer with a metallization stack. The metallization stack includes a backend memory layer wit...