ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,388,011, issued on Aug. 12, was assigned to Intel Corp. (Santa Clara, Calif.).
"Top gate recessed channel CMOS thin film transistor and methods of fabrication" was invented by Gilbert Dewey (Hillsboro, Ore.), Ryan Keech (Portland, Ore.), Cory Bomberger (Portland, Ore.), Cheng-Ying Huang (Hillsboro, Ore.), Ashish Agrawal (Hillsboro, Ore.), Willy Rachmady (Beaverton, Ore.) and Anand Murthy (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a device level having a metallization structure coupled to a semiconductor device and a transistor above the device level. The transistor has a body including a single crystal group III-V o...