ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,629, issued on Aug. 12, was assigned to Intel Corp. (Santa Clara, Calif.).
"Source/drain regions in integrated circuit structures" was invented by Sean T. Ma (Portland, Ore.) and Cory E. Weber (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are source/drain regions in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC structure may include: a channel region including a semiconductor material; and a source/drain region at a side face of the channel region, wherein the source/drain region includes a semiconductor portion and a contact metal, and the se...