ALEXANDRIA, Va., April 9 -- United States Patent no. 12,271,306, issued on April 8, was assigned to Intel Corp. (Santa Clara, Calif.).
"Integrated three-dimensional (3D) DRAM cache" was invented by Wilfred Gomes (Portland, Ore.), Adrian C. Moga (Portland, Ore.) and Abhishek Sharma (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) DRAM integrated in the same package as compute logic enable forming high-density caches. In one example, an integrated 3D DRAM includes a large on-de cache (such as a level 4 (L4) cache), a large on-die memory-side cache, or both an L4 cache and a memory-side cache. One or more tag caches cache recently accessed tags from the L4 cache, the memory...