ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,803, issued on April 29, was assigned to Intel Corp. (Santa Clara, Calif.).
"Transistor with isolation below source and drain" was invented by Willy Rachmady (Beaverton, Ore.), Cheng-Ying Huang (Portland, Ore.), Matthew V. Metz (Portland, Ore.), Nicholas G. Minutillo (Beaverton, Ore.), Sean T. Ma (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Jack T. Kavalieros (Portland, Ore.), Tahir Ghani (Portland, Ore.) and Gilbert Dewey (Beaverton, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a body of semiconductor material, where the body has laterally opposed body sidewalls and a top surface. A gate structure contacts the top...