US Patent Issued to Intel on April 29 for "High aspect ratio source or drain structures with abrupt dopant profile" (Oregon, Arizona Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,808, issued on April 29, was assigned to Intel Corp. (Santa Clara, Calif.).

"High aspect ratio source or drain structures with abrupt dopant profile" was invented by Ryan Keech (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Nicholas G. Minutillo (Beaverton, Ore.), Suresh Vishwanath (Phoenix), Mohammad Hasan (Aloha, Ore.), Biswajeet Guha (Hillsboro, Ore.) and Subrina Rafique (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit structures having source or drain structures with abrupt dopant profiles are described. In an example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A...