US Patent Issued to Intel on April 29 for "Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact" (American, German Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,789, issued on April 29, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact" was invented by Biswajeet Guha (Hillsboro, Ore.), William Hsu (Hillsboro, Ore.), Chung-Hsun Lin (Portland, Ore.), Kinyip Phoa (Beaverton, Ore.), Oleg Golonzka (Beaverton, Ore.), Tahir Ghani (Portland, Ore.), Kalyan Kolluru (Portland, Ore.), Nathan Jack (Forest Grove, Ore.), Nicholas Thomson (Hillsboro, Ore.), Ayan Kar (Portland, Ore.) and Benjamin Orr (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around structures having devices with source/drain-...