US Patent Issued to Intel on April 29 for "Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly" (Oregon Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,807, issued on April 29, was assigned to Intel Corp. (Santa Clara, Calif.).

"Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly" was invented by Aaron Lilak (Beaverton, Ore.), Rishabh Mehandru (Portland, Ore.), Willy Rachmady (Beaverton, Ore.), Harold Kennel (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device is disclosed. The device includes a channel, a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of metastable dopants, a second so...