ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,144, issued on April 15, was assigned to Intel Corp. (Santa Clara, Calif.).
"Gate contact structure over active gate and method to fabricate same" was invented by Abhijit Jayant Pethe (Hillsboro, Ore.), Tahir Ghani (Portland, Ore.), Mark Bohr (Aloha, Ore.), Clair Webb (Aloha, Ore.), Harry Gomez (Hillsboro, Ore.) and Annalisa Cappellani (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure h...