US Patent Issued to INTEL NDTM US on Sept. 23 for "3D NAND with inter-wordline airgap" (New Mexico, California, Idaho Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,483, issued on Sept. 23, was assigned to INTEL NDTM US LLC (Santa Clara, Calif.).

"3D NAND with inter-wordline airgap" was invented by Vijay Saradhi Mangu (Albuquerque, N.M.), David Meyaard (Boise, Idaho), Randy Koval (Albuquerque, N.M.) and Krishna Parat (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap dispo...