US Patent Issued to Intel NDTM US on Nov. 25 for "Metal hybrid charge storage structure for memory" (American, Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,225, issued on Nov. 25, was assigned to Intel NDTM US LLC (Santa Clara, Calif.).

"Metal hybrid charge storage structure for memory" was invented by Guangyu Huang (El Dorado, Calif.), Dipanjan Basu (Portland, Ore.), Meng-Wei Kuo (Boise, Idaho), Randy Koval (Albuquerque, N.M.), Henok Mebrahtu (Shanghai), Minsheng Wang (Shanghai), Jie Li (Shanghai), Fei Wang (Shanghai), Qun Gao (Shanghai), Xingui Zhang (Shanghai) and Guanjie Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the cont...