US Patent Issued to Intel NDTM US on Dec. 2 for "Dummy wordline contacts to improve etch margin of semi-isolated wordlines in staircase structures" (Chinese, Singaporean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,819, issued on Dec. 2, was assigned to Intel NDTM US LLC (Santa Clara, Calif.).

"Dummy wordline contacts to improve etch margin of semi-isolated wordlines in staircase structures" was invented by Liu Liu (Dalian, China), CHuan Sun (Dalian, China) and Hong Ma (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device with a three-dimensional (3D) staircase memory stack includes dummy connectors proximate semi-isolated connectors. The memory device includes multiple wordlines stacked in a 3D staircase stack, which includes a wordline at an edge of a region of the staircase. The memory device includes vertical connectors through an isolat...