ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,379,989, issued on Aug. 5, was assigned to Intel NDTM US LLC (Santa Clara, Calif.).
"Zero voltage program state detection" was invented by Kristopher H. Gaewsky (El Dorado Hills, Calif.) and Kevin K. Liou (Rancho Cordova, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "For NAND devices having a zero voltage program state as a result of a preconditioning operation, detecting the status of the zero voltage program state is important for customers to quickly validate their component and SSD flows to improve NAND retention and reliability after assembly and die level re-work. A zero voltage program state detection operation quickly determines the valid...