US Patent Issued to Intel NDTM US on Aug. 19 for "Memory cell sensing circuit with adjusted bias from pre-boost operation" (California Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,492, issued on Aug. 19, was assigned to Intel NDTM US LLC (Santa Clara, Calif.).

"Memory cell sensing circuit with adjusted bias from pre-boost operation" was invented by Shantanu R. Rajwade (Santa Clara, Calif.), Bayan Nasri (Folsom, Calif.), Tzu-Ning Fang (Palo Alto, Calif.), Rezaul Haque (Folsom, Calif.), Dhanashree R. Kulkarni (El Dorado Hills, Calif.), Narayanan Ramanan (San Jose, Calif.), Matin Amani (Fremont, Calif.), Ahsanur Rahman (Folsom, Calif.), Seong Je Park (San Jose, Calif.) and Netra Mahuli (Folsom, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sense circuit performs a multistage boost, including a boost during precharge op...