US Patent Issued to INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES on Dec. 2 for "Spin-orbit torque magnetoresistive random access memory and method of operating the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,820, issued on Dec. 2, was assigned to INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Spin-orbit torque magnetoresistive random access memory and method of operating the same" was invented by Kaiyou Wang (Beijing), Kun Lei (Beijing), Zelalem Abebe Bekele (Beijing) and Xiukai Lan (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A spin-orbit torque magnetoresistive random access memory and a method of operating the same. The memory includes memory cells. Each memory cell includes: an orbital Hall layer for generating an orbital polarized current under an action of an in-plane current; an alloy material layer including an al...