US Patent Issued to INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES on Sept. 30 for "Self-reference storage structure and in-memory computing circuit" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,175, issued on Sept. 30, was assigned to INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (Beijing).

"Self-reference storage structure and in-memory computing circuit" was invented by Guozhong Xing (Beijing), Huai Lin (Beijing), Yu Liu (Beijing), Kaiping Zhang (Beijing), Kangwei Zhang (Beijing), Hangbing LV (Beijing), Changqing Xie (Beijing), Qi Liu (Beijing), Ling Li (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A self-reference storage structure includes: three transistors, including a first transistor T1, a second transistor T2, and a third transistor T3; and two magnetic tunnel junctions, includi...