US Patent Issued to INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES on Jan. 13 for "HfO 2 ,-based ferroelectric capacitor and preparation method thereof, and HfO 2 ,-based ferroelectric memory" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,406, issued on Jan. 13, was assigned to INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (Beijing).

"HfO 2 ,-based ferroelectric capacitor and preparation method thereof, and HfO 2 ,-based ferroelectric memory" was invented by Qing Luo (Beijing), Pengfei Jiang (Beijing), Hangbing Lv (Beijing), Yuan Wang (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A HfO2-based ferroelectric capacitor and a preparation method therefor, and a HfO2-based ferroelectric memory, relating to the technical field of microelectronics. The purpose of enlarging the memory window of the ferroelectric memory is achieved by inserti...