US Patent Issued to Institute of Microelectronics of the Chines Academy of Sciences on April 15 for "Multi-layer semiconductor material structure and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,104, issued on April 15, was assigned to Institute of Microelectronics of the Chines Academy of Sciences (Beijing).

"Multi-layer semiconductor material structure and preparation method thereof" was invented by Fengwen Mu (Beijing), Xinhua Wang (Beijing), Sen Huang (Beijing), Ke Wei (Beijing) and Xinyu Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-prod...