US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Sept. 2 for "Semiconductor device having high driving capability and steep subthreshold swing (SS) characteristic and method of manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,395, issued on Sept. 2, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Semiconductor device having high driving capability and steep subthreshold swing (SS) characteristic and method of manufacturing the same" was invented by Yongliang Li (Beijing), Xiaohong Cheng (Beijing), Fei Zhao (Beijing), Jun Luo (Beijing) and Wenwu Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a substrate and a channel portion. The channel portion includes a first portion including a fin-shaped structure protrud...