US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Sept. 16 for "Metallization stack and method of manufacturing the same, and electronic device including metallization stack" (New York Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,976, issued on Sept. 16, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Metallization stack and method of manufacturing the same, and electronic device including metallization stack" was invented by Huilong Zhu (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metallization stack and a method of manufacturing the same, and an electronic device including the metallization stack are provided. The metallization stack may include at least one interconnection line layer and at least one via hole layer arranged alternately on a substrate. At least one pair of adjacent interconnection line layer a...