US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Oct. 28 for "Method for operating memory cell and resistive random access memory, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,516, issued on Oct. 28, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Method for operating memory cell and resistive random access memory, and electronic device" was invented by Xiaoxin Xu (Beijing), Jie Yu (Beijing), Danian Dong (Beijing), Zhaoan Yu (Beijing) and Hangbing Lv (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for operating a memory cell and a resistive random access memory, and an electronic device are provided. The method for operating a memory cell includes: performing a writing operation and an erasing operation on a resistive device. The writing operation includes: applying ...