US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Nov. 4 for "Pressure sensor based on zinc oxide nanowires and method of manufacturing pressure sensor" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,948, issued on Nov. 4, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Pressure sensor based on zinc oxide nanowires and method of manufacturing pressure sensor" was invented by Ling Li (Beijing), Xuewen Shi (Beijing), Nianduan Lu (Beijing), Congyan Lu (Beijing), Di Geng (Beijing), Xinlv Duan (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed l...