US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on March 4 for "Semiconductor device, method of manufacturing the same and electronic device including the same" (Chinese, American Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,442, issued on March 4, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Semiconductor device, method of manufacturing the same and electronic device including the same" was invented by Huilong Zhu (Poughkeepsie, N.Y.), Guilei Wang (Beijing), Henry H. Radamson (Beijing), Yanbo Zhang (Beijing) and Zhengyong Zhu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and a gate stack surrounding a periphery of the channel layer. The channel layer includes a...