US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on March 25 for "Memory circuit structure and method of operating memory circuit structure" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,911, issued on March 25, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Memory circuit structure and method of operating memory circuit structure" was invented by Xiaoxin Xu (Beijing), Jie Yu (Beijing), Danian Dong (Beijing), Zhaoan Yu (Beijing) and Hangbing Lv (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory circuit structure includes: a storage array, wherein the storage array includes at least two storage units; a decoder connected with a bit line and a word line of the storage array respectively; a programming circuit configured to generate a voltage pulse or a constant current pulse; a ...