US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on March 25 for "Complementary storage unit and method of preparing the same, and complementary memory" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,902, issued on March 25, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Complementary storage unit and method of preparing the same, and complementary memory" was invented by Qing Luo (Beijing), Bing Chen (Beijing), Hangbing Lv (Beijing), Ming Liu (Beijing) and Cheng Lu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A complementary storage unit and a method of preparing the same, and a complementary memory. The complementary storage unit includes: a control transistor, a pull-up diode and a pull-down diode. The control transistor is configured to control reading and writing of the storage unit. One e...