US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on July 22 for "Spin hall device, method for obtaining hall voltage, and max pooling method" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,366,593, issued on July 22, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Spin hall device, method for obtaining hall voltage, and max pooling method" was invented by Yan Cui (Beijing), Jun Luo (Beijing), Meiyin Yang (Beijing) and Jing Xu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a spin Hall device, a method for obtaining a Hall voltage, and a max pooling method. The spin Hall device includes a cobalt ferroboron layer. A top view and a bottom view of the spin Hall device are completely the same as a cross-shaped graph that has two axes of symmetry perpendicular to e...