US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Jan. 27 for "Method and apparatus for correcting proximity effect of electron beam" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,742, issued on Jan. 27, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Method and apparatus for correcting proximity effect of electron beam" was invented by Jian Xu (Beijing), Yayi Wei (Beijing) and Shang Yang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and an apparatus for correcting a proximity effect of an electron beam. An initial dose of the electron beam is preset for each exposed square, and proximity effect energy representing an influence of exposing all exposed squares other than a current exposed square on the current exposed is calculated. A corrected dose of the electron beam...