US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Jan. 13 for "Neuron device based on spin orbit torque" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,524,659, issued on Jan. 13, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Neuron device based on spin orbit torque" was invented by Guozhong Xing (Beijing), Di Wang (Beijing), Huai Lin (Beijing), Long Liu (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A neuron device including: an antiferromagnetic pinning layer, a first ferromagnetic layer and a spin orbit coupling layer formed on a substrate in sequence; a free layer formed on the spin orbit coupling layer and moving a magnetic domain wall according to a spin orbit torque; a tunneling layer formed on the free layer; a left pinnin...