US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Jan. 13 for "Multi-resistance-state spintronic device, read-write circuit, and in-memory Boolean logic operator" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,271, issued on Jan. 13, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Multi-resistance-state spintronic device, read-write circuit, and in-memory Boolean logic operator" was invented by Guozhong Xing (Beijing), Huai Lin (Beijing), Feng Zhang (Beijing), Di Wang (Beijing), Long Liu (Beijing), Changqing Xie (Beijing), Ling Li (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-resistance-state spintronic device, including: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction between two electrodes. The magnetic tu...