US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Feb. 3 for "Semiconductor device, fabrication method for same, and electronic device comprising same" (New York Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,356, issued on Feb. 3, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Semiconductor device, fabrication method for same, and electronic device comprising same" was invented by Huilong Zhu (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic apparatus including the semiconductor device. According to the embodiments, the semiconductor device may include: a vertical structure extending in a vertical direction relative to a substrate; and a nanosheet extending from the vertical structure and spac...