US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Feb. 25 for "Method for manufacturing semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,213, issued on Feb. 25, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Method for manufacturing semiconductor device" was invented by Libin Zhang (Beijing), Yayi Wei (Beijing) and Zhen Song (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1. The photolithographic coating is exposed to a light having a first wavelength, to image the to-be-con...