US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Dec. 9 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,589, issued on Dec. 9, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Semiconductor device and method for manufacturing the same" was invented by Yongliang Li (Beijing), Anlan Chen (Beijing), Fei Zhao (Beijing), Xiaohong Cheng (Beijing), Huaxiang Yin (Beijing), Jun Luo (Beijing) and Wenwu Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for manufacturing the same. The semiconductor device includes: a first gate-all-around (GAA) transistor disposed in the first region, including a first nanowire or nanosheet of at least one first layer, the at least one first layer...