US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Dec. 9 for "Method of preparing programmable diode, programmable diode and ferroelectric memory" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,557, issued on Dec. 9, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Method of preparing programmable diode, programmable diode and ferroelectric memory" was invented by Qing Luo (Beijing), Hangbing Lv (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of preparing a programmable diode, including: forming a tungsten plug by a standard CMOS process; taking the tungsten plug as a lower electrode and depositing a functional layer material such as a ferroelectric film on the tungsten plug; depositing an upper electrode on the functional layer material; and patterning the upper ...