US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Aug. 12 for "Three-dimensional memory comprising storage unit and logic control unit and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,595, issued on Aug. 12, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Three-dimensional memory comprising storage unit and logic control unit and method for manufacturing the same" was invented by Gang Zhang (Beijing) and Zongliang Huo (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory and a method for manufacturing the three-dimensional memory, the three-dimensional memory includes a storage unit and a logic control unit, a front of the storage unit and a front of the logic control unit are attached to each other, and the logic control unit is connected to a control circuit, w...