US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on April 29 for "Method for fabricating anti-reflective layer on quartz surface by using metal-induced self-masking etching technique" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,287,454, issued on April 29, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Method for fabricating anti-reflective layer on quartz surface by using metal-induced self-masking etching technique" was invented by Lina Shi (Beijing), Longjie Li (Beijing), Kaiping Zhang (Beijing), Jiebin Niu (Beijing), Changqing Xie (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for fabricating an anti-reflective layer on a quartz surface by using a metal-induced self-masking etching technique, comprising: performing reactive ion etching to a metal material and a q...