ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,165, issued on May 6, was assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY Co. LTD. (Zhuhai, China).
"Semiconductor device structure" was invented by Han-Chin Chiu (Zhuhai, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure and a conductive layer. The substrate has a first surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on ...