US Patent Issued to INNOSCIENCE (ZHUHAI) TECHNOLOGY on May 27 for "Semiconductor device with multichannel heterostructure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,569, issued on May 27, was assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY Co. LTD. (Zhuhai, China).

"Semiconductor device with multichannel heterostructure and manufacturing method thereof" was invented by Anbang Zhang (Zhuhai, China), King Yuen Wong (Zhuhai, China), Hao Li (Zhuhai, China), Haoning Zheng (Zhuhai, China) and Jian Wang (Zhuhai, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for manufacturing the same are provided in this disclosure. The semiconductor device includes a semiconductor heterostructure layer. The semiconductor heterostructure layer includes alternating first semiconductor material lay...