US Patent Issued to INNOSCIENCE (ZHUHAI) TECHNOLOGY on Jan. 28 for "Semiconductor device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,912, issued on Jan. 28, was assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY Co. LTD. (Zhuhai, China).

"Semiconductor device and fabrication method thereof" was invented by Hao Li (Zhuhai, China), Anbang Zhang (Zhuhai, China), Jian Wang (Zhuhai, China) and Haoning Zheng (Zhuhai, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-nitride layer, a gate, a connection structure, and a gate bus. The gate is disposed over the III-nitride layer. The connection structure is disposed over the gate. The gate bus extends substantially i...