ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,915, issued on April 29, was assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY Co. LTD. (Zhuhai, China).
"Semiconductor structure" was invented by Ronghui Hao (Zhuhai, China) and King Yuen Wong (Zhuhai, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer, the second nitride semiconductor layer forming ...