US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Sept. 23 for "Nitride-based semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,345, issued on Sept. 23, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Nitride-based semiconductor device and method for manufacturing the same" was invented by Zhiwen Dong (Suzhou, China), Qiyue Zhao (Suzhou, China) and Maolin Li (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a first source electrode, a second source electrode, and a drain electrode. The second nitride-based semiconductor layer includes a drift region doped, a first barrier region, and a s...