US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on May 27 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,532, issued on May 27, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Yi-Lun Chou (Suzhou, China), Kye Jin Lee (Suzhou, China), Han-Chin Chiu (Suzhou, China) and Xiuhua Pan (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which i...