US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on June 10 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,893, issued on June 10, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Fu Chen (Suzhou, China), Ronghui Hao (Suzhou, China) and King Yuen Wong (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a gate electrode, and a first and a second stress modulation layers. The first nitride-based semiconductor layer has a first thickness. The second nitride-based semiconductor layer has a bandgap less than a bandgap of th...