US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on July 8 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,650, issued on July 8, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Ziming Du (Suzhou, China), Changan Li (Suzhou, China), Weixing Du (Suzhou, China) and Jheng-Sheng You (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a group of negatively-charged ions. The gate electrode is located between the source and drain electrodes to define a drift region between t...