US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Jan. 13 for "Nitride-based semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,020, issued on Jan. 13, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Nitride-based semiconductor device and method for manufacturing the same" was invented by Chuan He (Suzhou, China), Xiaoqing Pu (Suzhou, China), Ronghui Hao (Suzhou, China), Jinhan Zhang (Suzhou, China) and King Yuen Wong (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a doped III-V semiconductor layer, a gate, a source electrode, and a drain electrode. The doped III-V semiconductor layer is disposed over the second nitride-based semicon...