US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Jan. 13 for "Nitride-based semiconductor circuit and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,063, issued on Jan. 13, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Nitride-based semiconductor circuit and method for manufacturing the same" was invented by Wuhao Gao (Suzhou, China) and Qiyue Zhao (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor circuit including a substrate structure, a nitride-based heterostructure, connectors, and connecting vias is provided. The substrate structure includes a first type semiconductor substrate, and a second type semiconductor substrate. The second type semiconductor substrate is embedded in a region of the first type semiconductor subst...