US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Jan. 13 for "High electron mobility transistor semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,046, issued on Jan. 13, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"High electron mobility transistor semiconductor device and method for manufacturing the same" was invented by Kai Hu (Suzhou, China), King Yuen Wong (Suzhou, China), Chaodong Ye (Suzhou, China) and Jinhan Zhang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor device includes first and second nitride-based semiconductor layers, first electrodes, doped nitride-based semiconductor layers, a second electrode, and gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based s...