US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Feb. 3 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,340, issued on Feb. 3, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Ziming Du (Suzhou, China), Changan Li (Suzhou, China), Weixing Du (Suzhou, China) and Jheng-Sheng You (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, and a doped nitride-based semiconductor layer. The doped nitride-based semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The doped nitride-based semicondu...