US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Dec. 9 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,595, issued on Dec. 9, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Chuan He (Suzhou, China), Xiaoqing Pu (Suzhou, China), Ronghui Hao (Suzhou, China), Jinhan Zhang (Suzhou, China) and King Yuen Wong (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, a first and a second field plates, and a first dielectric layer. The first field plate is disposed above the second nitride-based semiconductor layer. The second field plate is discon...